Structural imperfections of the hydroxyapatite surface layer to engineer its electrical potential
Latvijas Universitātes Cietvielu fizikas institūta, Doktorantūras skolas „Funkcionālie materiāli un nanotehnoloģijas” zinātniskais seminārs 22. novembrī plkst. 13:00, LU CFI, Ķengaraga ielā 8, 2.stāva zālē uzstājās Anna Bystrova (RTU).
Hydroxyapatite (HAp) is the most common material for bone implants. The influence on HAp surface potential of such structural imperfections as OH-, O-, H- vacancies, H-interstitials was considered. The design of crystalline HAp structures is performed in the theoretical part of work. The possible ways to engeneer the above defects are analysed in the experimental part of work.
