Scientists of our Institute’s Laboratory of Thin Films and Laboratory of Computer Modeling of Electronic Structure of Solids, Edgars Butanovs, Kevon Kadiwala, Aleksejs Gopejenko, Dmitry Bocharov, Sergei Piskunov, and Boris Polyakov have published an article Different strategies for GaN-MoS2 and GaN-WS2 core-shell nanowire growth (DOI:10.1016/j.apsusc.2022.153106) in the high-rank journal Applied Surface Science, with an impact factor of 6,707.
The article is about the development of two methods of high crystalline quality
GaN- MoS2 and GaN- WS2 core-shell heterostructures for nanowire synthesis:
- two-step process of sputter-deposition of a sacrificial transition metal oxide coating on GaN NWs followed by sulfurization;
- pulsed laser deposition of few-layer MoS2 or WS2 on GaN NWs from the respective material targets.
The fabricated nanostructures were characterized by SEM, TEM, XRD, XPS and micro-Raman spectroscopy. The experimental results were supported by theoretical electronic structure calculations, which demonstrated the potential of the synthesized core-shell NW heterostructures as photocatalysts for efficient hydrogen production from water.
This article was written within the frame of the Latvian Council of Science project No lzp-2020 / 1-0261 Core-shell nanowire heterostructures of Charge Density Wave materials for optoelectronic applications and with the support of the EU H2020 project ERA Chair MATTER (No 856705) and CAMART2 WIDESPREAD-01-2016-2017-TeamingPhase2 (No 739508) projects.
