The thesis describes structural and photophysical properties of MOCVD grown GaN nanowires (NWs) and InGaN quantum dots (QDs). For both cases it is shown that ex-situ RHEED measurements are feasible and yield qualitative information about the structure. In combination with other methods, firstly, it is shown that non-metalic catalyst assisted GaN NW characteristics differs from traditionally obtained ones, where catalyst seems to be located at the base of nanowire not top, and growth direction slightly differs from c-axes when synthesized on GaN (0001) surface, which results in semipolar NW structures. Secondly, for InGaN composite it was possible to recognize a strongly strained lattice in case of high indium concentration within QDs.
Key words: non-metalic catalist, GaN nanowires, InGaN quantum dots, ex-situ RHEED, nano-SIMS
